FQA11N90C_F109
FQA11N90C_F109 is MOSFET manufactured by Fairchild Semiconductor.
- N-Channel QFET® MOSFET
N-Channel QFET® MOSFET
900 V, 11.0 A, 1.1 Ω
Features
- 11 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5.5 A
- Low Gate Charge (Typ. 60 nC)
- Low Crss (Typ. 23 pF)
- 100% Avalanche Tested
- RoHS pliant
April 2014
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction...
