FQA11N90_F109 Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and...
FQA11N90_F109 Key Features
- 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @ VGS = 10 V, ID = 5.7 A
- Low Gate Charge (Typ. 72 nC)
- Low Crss (Typ. 30 pF)
- 100% Avalanche Tested
- RoHS pliant
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
- Derate Above 25oC
- 55 to +150 300