FQA11N90-F109 Datasheet N-channel MOSFET

Manufacturer: onsemi

Overview: DATA SHEET www.onsemi.com MOSFET – N-Channel QFET 900 V, 11.

Datasheet Details

Part number	FQA11N90-F109
Manufacturer	onsemi
File Size	296.58 KB
Description	N-Channel MOSFET
Datasheet	FQA11N90-F109-ONSemiconductor.pdf

General Description

This N−Channel Enhancement Mode Power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Features

11.4 A, 900 V, RDS(on) = 960 mW (Max. ) @ VGS = 10 V, ID = 5.7 A.
Low Gate Charge (Typ.72 nC).
Low Crss (Typ. 30 pF).
100% Avalanche Tested.
This Device is Pb.
Free Halide, Free and RoHS Compliant MOSFET.

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