FQA11N90-F109 Overview
This N−Channel Enhancement Mode Power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp...
FQA11N90-F109 Key Features
- 11.4 A, 900 V, RDS(on) = 960 mW (Max.) @ VGS = 10 V, ID = 5.7 A
- Low Gate Charge (Typ.72 nC)
- Low Crss (Typ. 30 pF)
- 100% Avalanche Tested
- This Device is Pb-Free Halide, Free and RoHS pliant
- Continuous (TC = 25°C)
- Continuous (TC = 100°C) Drain Current
- Pulsed (Note 1) Gate to Source Voltage Single Pulse Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Aval
- (TC = 25°C)
- Derate Above 25°C