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FQA11N90-F109 - N-Channel MOSFET

General Description

This N

using onsemi’s proprietary planar stripe and DMOS technology.

state resistance, and to provide superior switching performance and high avalanche energy s

Key Features

  • 11.4 A, 900 V, RDS(on) = 960 mW (Max. ) @ VGS = 10 V, ID = 5.7 A.
  • Low Gate Charge (Typ.72 nC).
  • Low Crss (Typ. 30 pF).
  • 100% Avalanche Tested.
  • This Device is Pb.
  • Free Halide, Free and RoHS Compliant MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET www.onsemi.com MOSFET – N-Channel QFET 900 V, 11.4 A, 960 mW FQA11N90-F109 Description This N−Channel Enhancement Mode Power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 11.4 A, 900 V, RDS(on) = 960 mW (Max.) @ VGS = 10 V, ID = 5.7 A • Low Gate Charge (Typ.72 nC) • Low Crss (Typ. 30 pF) • 100% Avalanche Tested • This Device is Pb−Free Halide, Free and RoHS Compliant MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted.