Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
Features
- 12.6 A, 800 V, RDS(on) = 750 mΩ (Max. ) @ VGS = 10 V, ID = 6.3 A.
- Low Gate Charge (Typ. 68 nC).
- Low Crss (Typ. 30 pF).
- 100% Avalanche Tested
D
G DS
TO-3PN
G S
Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol
Parameter
VDSS ID
IDM VGSS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
Gate-Source.
FQA13N80_F109 Datasheet
