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FQA13N80_F109 - MOSFET

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Key Features

  • 12.6 A, 800 V, RDS(on) = 750 mΩ (Max. ) @ VGS = 10 V, ID = 6.3 A.
  • Low Gate Charge (Typ. 68 nC).
  • Low Crss (Typ. 30 pF).
  • 100% Avalanche Tested D G DS TO-3PN G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source.

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
FQA13N80 800V N-Channel MOSFET
FQA13N50 500V N-Channel MOSFET
FQA13N50C 500V N-Channel MOSFET
FQA13N50CF 500V N-Channel MOSFET
FQA10N60C 600V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FQA13N80_F109 — N-Channel QFET® MOSFET FQA13N80_F109 N-Channel QFET® MOSFET 800 V, 12.6 A, 750 mΩ April 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 12.6 A, 800 V, RDS(on) = 750 mΩ (Max.) @ VGS = 10 V, ID = 6.3 A • Low Gate Charge (Typ. 68 nC) • Low Crss (Typ. 30 pF) • 100% Avalanche Tested D G DS TO-3PN G S Absolute Maximum Ratings TC = 25oC unless otherwise noted.