Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Features
- 21.8A, 200V, RDS(on) = 0.17Ω @VGS = 10 V.
- Low gate charge ( typical 40.5 nC).
- Low Crss ( typical 85 pF).
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability
G DS
TO-3PN
FQA Series
D
{
G{.
- ◀▲.
- {
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C.
FQA19N20C Datasheet
