FQA28N50 Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply, power...
FQA28N50 Key Features
- 28.4 A, 500 V, RDS(on) = 160 mΩ (Max.) @ VGS = 10 V, ID = 14.2 A
- Low Gate Charge (Typ. 110 nC)
- Low Crss (Typ. 60 pF)
- 100% Avalanche Tested
- RoHS pliant