FQA28N50F
Overview
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
- 28.4A, 500V, RDS(on) = 0.16Ω @VGS = 10 V Low gate charge ( typical 110 nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche tested Improved dv/dt capability Fast recovery body diode ( max, 250ns ) D ! " G! G DS ! " " " TO-3P FQA Series ! S
