| Part Number | FQA28N50F Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min.
* * * * * * * 28.4A, 500V, RDS(on) = 0.16Ω @VGS = 10 V Low gate charge ( typical 110 nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche tested Improved dv/dt capability Fast recovery body diode ( max, 250ns ) D ! " G! G DS ! " " " TO-3P FQA Series ! S Absolute Maximum Ratings Symbol . |
FQA28N50F Datasheet and Specifications PDF
The FQA28N50F is a 500V N-Channel MOSFET.
| Part Number | FQA28N50F Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-3P packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
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*With TO-3P packaging *High speed switching *Standard level gate drive *Easy to use *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Power supply *Switching applications *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER V. |