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FQA34N25 Datasheet 250v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQA34N25 October 2001 FQA34N25 250V N-Channel MOSFET General.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.

Key Features

  • 34A, 250V, RDS(on) = 0.085Ω @VGS = 10 V Low gate charge ( typical 60 nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !.
  • ◀ ▲.
  • G! G DS TO-3P FQA Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) D.

More Datasheets from Fairchild (now onsemi)

Part Number Description
FQA34N20 200V N-Channel MOSFET
FQA34N20L 200V LOGIC N-Channel MOSFET
FQA30N40 400V N-Channel MOSFET
FQA32N20C N-Channel MOSFET
FQA33N10 100V N-Channel MOSFET
FQA33N10L 100V LOGIC N-Channel MOSFET
FQA35N40 400V N-Channel MOSFET
FQA36P15 150V P-Channel MOSFET
FQA38N30 300V N-Channel MOSFET
FQA38N40 300V N-Channel MOSFET

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