FQA38N30
Overview
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
- 38.4 A, 300 V, RDS(on) = 85 mΩ (Max.) @ VGS = 10 V, ID = 19.2 A
- Low Gate Charge (Typ. 90 nC)
- Low Crss (Typ. 70 pF)
- 100% Avalanche Tested
- RoHS compliant August 2014
