Datasheet4U Logo Datasheet4U.com

FQA65N20 Datasheet 200v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQA65N20 August 2001 QFET FQA65N20 200V N-Channel MOSFET General.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterrupted power supply, motor control.

Key Features

  • 65A, 200V, RDS(on) = 0.032Ω @VGS = 10 V Low gate charge ( typical 170 nC) Low Crss ( typical 90 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G DS ! " " " TO-3P FQA Series TC = 25°C unless otherwise noted ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current -.

More Datasheets from Fairchild (now onsemi)

Part Number Description
FQA65N06 60V N-Channel MOSFET
FQA62N25C MOSFET
FQA6N70 700V N-Channel MOSFET
FQA6N80 800V N-Channel MOSFET
FQA6N90 900V N-Channel MOSFET
FQA6N90C 900V N-Channel MOSFET
FQA6N90C_F109 900V N-Channel MOSFET
FQA10N60C 600V N-Channel MOSFET
FQA10N80 800V N-Channel MOSFET
FQA10N80C 800V N-Channel MOSFET

FQA65N20 Distributor