Datasheet4U Logo Datasheet4U.com

FQA6N80 Datasheet 800v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQA6N80 September 2000 QFET FQA6N80 800V N-Channel MOSFET General.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switch mode power supply.

Key Features

  • 6.3A, 800V, RDS(on) = 1.95Ω @VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G DS 3 " " 5 TO-3P FQA Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current.

More Datasheets from Fairchild (now onsemi)

Part Number Description
FQA6N70 700V N-Channel MOSFET
FQA6N90 900V N-Channel MOSFET
FQA6N90C 900V N-Channel MOSFET
FQA6N90C_F109 900V N-Channel MOSFET
FQA62N25C MOSFET
FQA65N06 60V N-Channel MOSFET
FQA65N20 200V N-Channel MOSFET
FQA10N60C 600V N-Channel MOSFET
FQA10N80 800V N-Channel MOSFET
FQA10N80C 800V N-Channel MOSFET

FQA6N80 Distributor