Datasheet4U Logo Datasheet4U.com

FQA62N25C - MOSFET

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Key Features

  • 62 A, 250 ID = 31 A V, RDS(on) = 35 mΩ (Max. ) @ VGS = 10 V,.
  • Low Gate Charge (Typ. 100 nC).
  • Low Crss (Typ. 63.5 pF).
  • 100% Avalanche Tested D G DS TO-3PN G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Sou.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FQA6N90C-F109 N-Channel MOSFET ON Semiconductor
FQA020ADC-007-M EMC Filters TDK-Lambda
FQA020ADC-007-S EMC Filters TDK-Lambda
FQA020ADC-N07-S EMC Filters TDK-Lambda
FQA10N80C-F109 N-Channel QFET MOSFET ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FQA65N06 60V N-Channel MOSFET
FQA65N20 200V N-Channel MOSFET
FQA6N70 700V N-Channel MOSFET
FQA6N80 800V N-Channel MOSFET
FQA6N90 900V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FQA62N25C — N-Channel QFET® MOSFET FQA62N25C N-Channel QFET® MOSFET 250 V, 62 A, 35 mΩ April 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 62 A, 250 ID = 31 A V, RDS(on) = 35 mΩ (Max.) @ VGS = 10 V, • Low Gate Charge (Typ. 100 nC) • Low Crss (Typ. 63.