FQA62N25C - MOSFET

Product Overview

Fairchild Semiconductor

Part number	FQA62N25C
Manufacturer	Fairchild Semiconductor
File Size	2.01 MB
Description	MOSFET
Datasheet	FQA62N25C Datasheet
Additional preview pages of the FQA62N25C datasheet.

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

62 A, 250 ID = 31 A V, RDS(on) = 35 mΩ (Max. ) @ VGS = 10 V,.
Low Gate Charge (Typ. 100 nC).
Low Crss (Typ. 63.5 pF).
100% Avalanche Tested D G DS TO-3PN G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Sou.

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Published: Jan 16, 2017 |