Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
Features
- 62 A, 250 ID = 31 A
V,
RDS(on)
=
35
mΩ
(Max. )
@
VGS
=
10
V,.
- Low Gate Charge (Typ. 100 nC).
- Low Crss (Typ. 63.5 pF).
- 100% Avalanche Tested
D
G DS
TO-3PN
G S
Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Sou.
FQA62N25C Datasheet
