FQA90N15
Features
- RDS(on) = 18 mΩ (Max.) @ VGS = 10 V, ID = 45 A
- Low Gate Charge (Typ. 220 n C)
- Low Crss (Typ. 200 p F)
- 100% Avalanche Tested
- 175°C Maximum Junction Memperature Rating
May 2014
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching for DC/DC converters, and DC motor control, uninterrupted power supply.
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG TL
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note...
