FQA90N15_F109 Overview
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as audio amplifier,...
FQA90N15_F109 Key Features
- RDS(on) = 18 mΩ (Max.) @ VGS = 10 V, ID = 45 A
- Low Gate Charge (Typ. 220 nC)
- Low Crss (Typ. 200 pF)
- 100% Avalanche Tested
- 175°C Maximum Junction Memperature Rating
