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FQA90N15-F109 Datasheet N-channel MOSFET

Manufacturer: onsemi

Overview: FQA90N15-F109 — N-Channel QFET® MOSFET FQA90N15-F109 N-Channel QFET® MOSFET 150 V, 90 A, 18.

General Description

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching for DC/DC converters, and DC motor control, uninterrupted power supply.

Key Features

  • RDS(on) = 18 mΩ (Max. ) @ VGS = 10 V, ID = 45 A.
  • Low Gate Charge (Typ. 220 nC).
  • Low Crss (Typ. 200 pF).
  • 100% Avalanche Tested.
  • 175°C Maximum Junction Memperature Rating.

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