FQAF22P10 Datasheet 100V P-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

FQAF22P10 100v p-channel mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	FQAF22P10
Manufacturer	Fairchild (now onsemi)
File Size	629.05 KB
Description	100V P-Channel MOSFET
Datasheet	FQAF22P10 Datasheet

General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

Overview

FQAF22P10 QFET FQAF22P10 100V P-Channel MOSFET General.

Key Features

-16.6A, -100V, RDS(on) = 0.125Ω @VGS = -10 V Low gate charge ( typically 40 nC) Low Crss ( typically 160 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G G D S TO-3PF FQAF Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain C.

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