FQAF22P10 Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as audio amplifier,...
FQAF22P10 Key Features
- 16.6A, -100V, RDS(on) = 0.125Ω @VGS = -10 V Low gate charge ( typically 40 nC) Low Crss ( typically 160 pF) Fast switchi