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FQAF9P25 - 250V P-Channel MOSFET

Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • -7.1A, -250V, RDS(on) = 0.62Ω @VGS = -10 V Low gate charge ( typical 29 nC) Low Crss ( typical 27 pF) Fast switching 100% avalanche tested Improved dv/dt capability S !.
  • G! ▶ ▲.
  • G D S TO-3PF FQAF Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100.

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Datasheet Details

Part number FQAF9P25
Manufacturer Fairchild Semiconductor
File Size 555.35 KB
Description 250V P-Channel MOSFET
Datasheet download datasheet FQAF9P25 Datasheet
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FQAF9P25 December 2000 QFET FQAF9P25 250V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high a energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters. TM Features • • • • • • -7.1A, -250V, RDS(on) = 0.
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