FQAF9P25 Overview
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high a energy pulse in the avalanche and mutation modes. These devices are well suited for high efficiency switching DC/DC converters.
FQAF9P25 Key Features
- 7.1A, -250V, RDS(on) = 0.62Ω @VGS = -10 V Low gate charge ( typical 29 nC) Low Crss ( typical 27 pF) Fast switching 100%