FQAF9P25 Datasheet | Fairchild Semiconductor

December 2000 QFET 250V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high a energy pulse in the avalanche and mutation modes. These devices are well suited for high efficiency switching DC/DC converters. Features - - - - - - -7.1A, -250V, RDS(on) = 0.62Ω @VGS = -10 V Low gate charge ( typical 29 n C) Low Crss ( typical 27 p F) Fast switching 100% avalanche tested Improved dv/dt capability ! - - G! ▶ ▲ - G D S TO-3PF FQAF...