FQB10N60C - 600V N-Channel MOSFET

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Fairchild Semiconductor

Part number	FQB10N60C
Manufacturer	Fairchild Semiconductor
File Size	614.17 KB
Description	600V N-Channel MOSFET
Datasheet	FQB10N60C Datasheet
Additional preview pages of the FQB10N60C datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V Low gate charge ( typical 44 nC) Low Crss ( typical 18 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
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G S D2-PAK FQB Series I2-PAK G D S FQI Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current.

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Published: Apr 1, 2005 |