FQB13N10 Datasheet 100v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQB13N10 / FQI13N10 FQB13N10 / FQI13N10 100V N-Channel MOSFET January 2001 QFETTM.

Datasheet Details

Part number	FQB13N10
Manufacturer	Fairchild (now onsemi)
File Size	627.51 KB
Description	100V N-Channel MOSFET
Datasheet	FQB13N10_FairchildSemiconductor.pdf

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes.

These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

Key Features

12.8A, 100V, RDS(on) = 0.18Ω @VGS = 10 V.
Low gate charge ( typical 12 nC).
Low Crss ( typical 20 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability.
175°C maximum junction temperature rating D GS D2-PAK FQB Series GDS I2-PAK FQI Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continu.

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