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FQB13N10 - 100V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 12.8A, 100V, RDS(on) = 0.18Ω @VGS = 10 V.
  • Low gate charge ( typical 12 nC).
  • Low Crss ( typical 20 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • 175°C maximum junction temperature rating D GS D2-PAK FQB Series GDS I2-PAK FQI Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continu.

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FQB13N10L 100V LOGIC N-Channel MOSFET
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Full PDF Text Transcription

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FQB13N10 / FQI13N10 FQB13N10 / FQI13N10 100V N-Channel MOSFET January 2001 QFETTM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. Features • 12.8A, 100V, RDS(on) = 0.
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