FQB13N10 Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and mutation modes. These devices are well suited for low voltage applications such as audio...
FQB13N10 Key Features
- 12.8A, 100V, RDS(on) = 0.18Ω @VGS = 10 V
- Low gate charge ( typical 12 nC)
- Low Crss ( typical 20 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- 175°C maximum junction temperature rating