FQB13N10L Datasheet 100v Logic N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQB13N10L / FQI13N10L December 2000 QFET FQB13N10L / FQI13N10L 100V LOGIC N-Channel.

Datasheet Details

Part number	FQB13N10L
Manufacturer	Fairchild (now onsemi)
File Size	564.89 KB
Description	100V LOGIC N-Channel MOSFET
Datasheet	FQB13N10L_FairchildSemiconductor.pdf

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes.

These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.

Key Features

12.8A, 100V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 8.7 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuou.

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