FQB19N10 Datasheet | Fairchild Semiconductor

FQB19N10 / FQI19N10 August 2000 QFET FQB19N10 / FQI19N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. D Features - - - - - - - 19A, 100V, RDS(on) = 0.1Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss...