FQB19N10 Datasheet 100v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQB19N10 / FQI19N10 August 2000 QFET FQB19N10 / FQI19N10 100V N-Channel.

Datasheet Details

Part number	FQB19N10
Manufacturer	Fairchild (now onsemi)
File Size	575.40 KB
Description	100V N-Channel MOSFET
Datasheet	FQB19N10_FairchildSemiconductor.pdf

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

Key Features

19A, 100V, RDS(on) = 0.1Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (T.

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