FQB19N10L Datasheet | Fairchild Semiconductor

FQB19N10L / FQI19N10L August 2000 QFET FQB19N10L / FQI19N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control. Features - - - - - - - 19A, 100V, RDS(on) = 0.1Ω @VGS = 10 V Low gate charge ( typical 14 nC) Low Crss (...