Datasheet Details
| Part number | FQB22P10TM_F085 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 693.77 KB |
| Description | 100V P-Channel MOSFET |
| Datasheet |
 FQB22P10TM_F085 Datasheet
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General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Key Features
- -22A, -100V, RDS(on) = 0.125Ω @VGS = -10 V Low gate charge ( typical 40 nC) Low Crss ( typical 160 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating Qualified to AEC Q101 RoHS Compliant D D G S G D2-PAK FQB Series TC = 25°C unless otherwise noted Absolute Maximum Ratings Symbol VDSS ID S FQB22P10TM_F085 -100 -22 -15.6 Units V A A A V mJ A mJ.