Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Features
- -22A, -100V, RDS(on) = 0.125Ω @VGS = -10 V Low gate charge ( typical 40 nC) Low Crss ( typical 160 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating Qualified to AEC Q101 RoHS Compliant
D
D
G
S
G
D2-PAK
FQB Series
TC = 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol VDSS ID
S FQB22P10TM_F085 -100 -22 -15.6 Units V A A A V mJ A mJ.
FQB22P10TM_F085 Datasheet
