FQB22P10TM_F085 Datasheet | Fairchild Semiconductor

FQB22P10TM_F085 100V P-Channel MOSFET February 2009 QFET ® 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. Features - - - - - - - - - -22A, -100V, RDS(on) = 0.125Ω @VGS = -10 V Low gate charge ( typical 40 n C) Low Crss ( typical 160 p F) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating Qualified to AEC Q101 Ro HS pliant D2-PAK FQB Series TC = 25°C unless otherwise...