FQB25N33 Description
These N-Channel enhancement mode power field effect transistors are produced using Farichild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimized on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies,...
FQB25N33 Key Features
- 25A, 330V, RDS(on) = 0.23Ω @VGS = 10V
- Low gate charge (typical 58nC)
- Low Crss (typical 40pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- RoHS pliant
- Qualified to AEC Q101