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FQB25N33TM_F085 - 330V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Farichild’s proprietary, planar stripe, DMOS technology.

Key Features

  • 25A, 330V, RDS(on) = 0.23Ω @VGS = 10V.
  • Low gate charge (typical 58nC).
  • Low Crss (typical 40pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • Qualified to AEC Q101.
  • RoHS Compliant April 2010 tm General.

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FQB25N33TM_F085 330V N-Channel MOSFET FQB25N33TM_F085 330V N-Channel MOSFET Features • 25A, 330V, RDS(on) = 0.23Ω @VGS = 10V • Low gate charge (typical 58nC) • Low Crss (typical 40pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Qualified to AEC Q101 • RoHS Compliant April 2010 tm General Description These N-Channel enhancement mode power field effect transistors are produced using Farichild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimized on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.