FQB44N08 Datasheet | Fairchild Semiconductor

FQB44N08 / FQI44N08 August 2000 QFET FQB44N08 / FQI44N08 80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. D Features - - - - - - - 44A, 80V, RDS(on) = 0.034Ω @VGS = 10 V Low gate charge ( typical 38 n C) Low Crss ( typical 90 p F) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating ! " G! ! " " " D2-PAK FQB Series I2-PAK FQI...