FQB44N08 Overview
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as automotive, high...
FQB44N08 Key Features
- 44A, 80V, RDS(on) = 0.034Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 90 pF) Fast switching 100% av