FQB45N15V2 Datasheet | Fairchild Semiconductor

FQB45N15V2/FQI45N15V2 QFET FQB45N15V2/FQI45N15V2 150V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required. ® Features - - - - - - 45A, 150V, RDS(on) = 0.04Ω @VGS = 10 V Low gate charge ( typical 72 n C) Low Crss ( typical 135 p F) Fast switching 100% avalanche tested Improved dv/dt capability ! " D2-PAK FQB Series I2-PAK FQI Series G! ! " "...