FQB4N80 Datasheet 800v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQB4N80 / FQI4N80 September 2000 QFET FQB4N80 / FQI4N80 800V N-Channel.

Datasheet Details

Part number	FQB4N80
Manufacturer	Fairchild (now onsemi)
File Size	659.86 KB
Description	800V N-Channel MOSFET
Datasheet	FQB4N80_FairchildSemiconductor.pdf

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supply.

Key Features

3.9A, 800V, RDS(on) = 3.6Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 8.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! 3 " " 5 D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 10.

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