Datasheet Summary
- N-Channel QFET® MOSFET
N-Channel QFET® MOSFET
500 V, 5 A, 1.4 Ω
November 2013
Features
- 5 A, 500 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 10 V, ID = 2.5 A
- Low Gate Charge (Typ. 18 nC)
- Low Crss (Typ. 15 pF)
- 100% Avalanche Tested
- RoHS pliant
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and...