FQB8N60C Overview
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies,...
FQB8N60C Key Features
- 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V
- Low gate charge ( typical 28 nC)
- Low Crss ( typical 12 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
