FQB8N60C
FQB8N60C is N-Channel MOSFET manufactured by onsemi.
Description
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
- 7.5 A, 600 V, RDS(on) = 1.2 Ω (Max.) @ VGS = 10 V, ID = 3.75 A
- Low Gate Charge (Typ. 28 n C)
- Low Crss (Typ. 12 p F)
- 100% Avalanche Tested
- Ro HS pliant
D2-PAK
I2-PAK
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt
TJ, TSTG TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C)- Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds.
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
FQB8N60CTM / FQI8N60CTU 600 7.5 4.6 30 ± 30 230 7.5 14.7 4.5 3.13 147 1.18
-55 to +150
Unit V A A A V m J A m...
