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FQB8N60C - N-Channel MOSFET

Datasheet Summary

Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 7.5 A, 600 V, RDS(on) = 1.2 Ω (Max. ) @ VGS = 10 V, ID = 3.75 A.
  • Low Gate Charge (Typ. 28 nC).
  • Low Crss (Typ. 12 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant D D G S D2-PAK GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage.

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Datasheet Details

Part number FQB8N60C
Manufacturer ON Semiconductor
File Size 754.28 KB
Description N-Channel MOSFET
Datasheet download datasheet FQB8N60C Datasheet
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FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET FQB8N60C / FQI8N60C N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 7.5 A, 600 V, RDS(on) = 1.2 Ω (Max.) @ VGS = 10 V, ID = 3.75 A • Low Gate Charge (Typ. 28 nC) • Low Crss (Typ.
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