FQB8N60CF Datasheet | Fairchild Semiconductor

Features - 6.26A, 600V, RDS(on) = 1.5 Ω @VGS = 10 V - Low gate charge ( typical 28n C) - Low Crss ( typical 12p F) - Fast switching - 100% avalanche tested - Improved dv/dt capability - Ro HS pliant October 2008 QFETTM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. D2-PAK FQB Series Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds (Note 1) (Note 2) (Note 1) (Note 1) (Note...