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FQB8N60CF - 600V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • 6.26A, 600V, RDS(on) = 1.5 Ω @VGS = 10 V.
  • Low gate charge ( typical 28nC).
  • Low Crss ( typical 12pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS Compliant D October 2008 QFETTM.

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📁 Similar Datasheet

Part Number Description Manufacturer
FQB8N60C N-Channel MOSFET ON Semiconductor

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FQB8N60CF 600V N-Channel MOSFET FQB8N60CF 600V N-Channel MOSFET Features • 6.26A, 600V, RDS(on) = 1.5 Ω @VGS = 10 V • Low gate charge ( typical 28nC) • Low Crss ( typical 12pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS Compliant D October 2008 QFETTM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.