FQB9N30 Datasheet | Fairchild Semiconductor

.. FQB9N30 / FQI9N30 May 2000 QFET FQB9N30 / FQI9N30 300V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply. Features - - - - - - 9.0A, 300V, RDS(on) = 0.45Ω @VGS = 10 V Low gate charge ( typical 17 n C) Low Crss ( typical 16 p F) Fast switching 100% avalanche tested Improved dv/dt capability ! " G! ! " " " D2-PAK FQB Series I2-PAK FQI...