Description
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
Features
- -9.4 A, -60 V, RDS(on) = 185 mΩ (Max. ) @ VGS = -10 V, ID = -4.7 A.
- Low Gate Charge (Typ. 13 nC).
- Low Crss (Typ. 45 pF).
- 100% Avalanche Tested
G S
D
D-PAK
GDS
S
G
I-PAK
D
Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG TL
Parameter
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche En.
FQD11P06 Datasheet
