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FQD12N20 Datasheet 200v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQD12N20 / FQU12N20 — N-Channel QFET® MOSFET FQD12N20 / FQU12N20 N-Channel QFET® MOSFET 200 V, 9 A, 280 mΩ October.

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Features

  • 9 A, 200 V, RDS(on) = 280 mΩ (Max. ) @ VGS = 10 V, ID = 4.5 A.
  • Low Gate Charge (Typ. 18 nC).
  • Low Crss (Typ. 18 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant D D G S D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter.
  •  4 4.
  •  < 4 < !$    .
  •              1,)562   1,/((62 8  ;  .
  •    .

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