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FQD17N08L - 80V LOGIC N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 12.9A, 80V, RDS(on) = 0.1Ω @VGS = 10 V Low gate charge ( typical 8.8 nC) Low Crss ( typical 29 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirements allowing direct operation from logic drives D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter.

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Datasheet Details

Part number FQD17N08L
Manufacturer Fairchild Semiconductor
File Size 555.57 KB
Description 80V LOGIC N-Channel MOSFET
Datasheet download datasheet FQD17N08L Datasheet
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FQD17N08L / FQU17N08L December 2000 QFET FQD17N08L / FQU17N08L 80V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. TM Features • • • • • • • 12.9A, 80V, RDS(on) = 0.1Ω @VGS = 10 V Low gate charge ( typical 8.
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