Datasheet4U Logo Datasheet4U.com

FQD19N10 - N-Channel MOSFET

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 15.6 A, 100 V, RDS(on) = 100 mΩ (Max. ) @ VGS = 10 V, ID = 7.8 A.
  • Low Gate Charge (Typ. 19 nC).
  • Low Crss (Typ. 32 pF).
  • 100% Avalanche Tested D G S D D-PAK G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed.

📥 Download Datasheet

Datasheet preview – FQD19N10

Datasheet Details

Part number FQD19N10
Manufacturer Fairchild Semiconductor
File Size 1.18 MB
Description N-Channel MOSFET
Datasheet download datasheet FQD19N10 Datasheet
Additional preview pages of the FQD19N10 datasheet.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FQD19N10 — N-Channel QFET® MOSFET FQD19N10 N-Channel QFET® MOSFET 100 V, 15.6 A, 100 mΩ November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • 15.6 A, 100 V, RDS(on) = 100 mΩ (Max.) @ VGS = 10 V, ID = 7.8 A • Low Gate Charge (Typ. 19 nC) • Low Crss (Typ. 32 pF) • 100% Avalanche Tested D G S D D-PAK G Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Published: |