FQD1N50B Datasheet | Fairchild Semiconductor

FQD1N50B / FQU1N50B May 2000 QFET FQD1N50B / FQU1N50B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. Features - - - - - - 1.1A, 500V, RDS(on) = 9.0Ω @VGS = 10 V Low gate charge ( typical 4.0 nC) Low Crss (...