Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.
Features
- 1 A, 600 V, RDS(on) = 11.5 Ω (Max. ) @ VGS = 10 V, ID = 0.5 A.
- Low Gate Charge (Typ. 4.8 nC).
- Low Crss (Typ. 3.5 pF).
- 100% Avalanche Tested.
- RoHS Compliant
D
G S D-PAK
G D S
I-PAK
G!
D
!.
- ◀▲.
- !
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG TL
Parameter
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulse.
FQD1N60C Datasheet
