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FQD1N60C Datasheet N-channel MOSFET

Manufacturer: onsemi

Overview: FQD1N60C / FQU1N60C — N-Channel QFET® MOSFET www.onsemi.com FQD1N60C / FQU1N60C N-Channel QFET® MOSFET 600 V, 1.0 A, 11.

General Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Features

  • 1 A, 600 V, RDS(on) = 11.5 Ω (Max. ) @ VGS = 10 V, ID = 0.5 A.
  • Low Gate Charge (Typ. 4.8 nC).
  • Low Crss (Typ. 3.5 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

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