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FQD1N60C Datasheet

The FQD1N60C is a N-Channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberFQD1N60C
ManufacturerHAOHAI
Overview 1.3A, 600V, N H FQU1N60C FQD1N60C H1N60U H1N60D 1N60 HAOHAI U: TO-251 D: TO-252 1N60 Series N-Channel MOSFET 80/ 2.5K/ 4Kpcs/ 5Kpcs/ 24Kpcs 25Kpcs 　■APPLICATION 　　ELECTRON. 　　LOW ON-RESISTANCE 　　FAST SWITCHING 　　HIGH INPUT RESISTANCE 　　RoHS COMPLIANT 　　Package: TO-251 and TO-252（IPAK & DPAK） 　
* 　　、、、RoHS 　
* 　　、LCD、LED、、UPS 　　、、、、 　　、、 　　、 　
* 　　TO-251（IPAK）、TO-252（DPAK） 1N60 Series Pin Assignment 3-Lead Plastic TO-251 Package Code: U Pin 1: Gate Pin 2: Drain Pin 3: .
Part NumberFQD1N60C
DescriptionN-Channel MOSFET
Manufactureronsemi
Overview This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce .
* 1 A, 600 V, RDS(on) = 11.5 Ω (Max.) @ VGS = 10 V, ID = 0.5 A
* Low Gate Charge (Typ. 4.8 nC)
* Low Crss (Typ. 3.5 pF)
* 100% Avalanche Tested
* RoHS Compliant Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technolog.
Part NumberFQD1N60C
Description600V N-Channel MOSFET
ManufacturerFairchild Semiconductor
Overview This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to.
* 1 A, 600 V, RDS(on) = 11.5 Ω (Max.) @ VGS = 10 V, ID = 0.5 A
* Low Gate Charge (Typ. 4.8 nC)
* Low Crss (Typ. 3.5 pF)
* 100% Avalanche Tested
* RoHS Compliant D G S D-PAK G D S I-PAK G! D !
* ◀▲
*
* ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IA.

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