Datasheet Summary
FQD2N60C / FQU2N60C N-Channel QFET® MOSFET
April 2013
FQD2N60C / FQU2N60C
600 V, 1.9 A, 4.7 Ω Features
- 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, ID = 0.95 A
- Low Gate Charge (Typ. 8.5 nC)
- Low Crss (Typ. 4.3 pF)
- 100% Avalanche Tested
- RoHS pliant
N-Channel QFET® MOSFET
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor...
