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FQD2N60C - N-Channel MOSFET

Key Features

  • 1.9 A, 600 V, RDS(on) = 4.7 W (Max. ) @ VGS = 10 V, ID = 0.95 A.
  • Low Gate Charge (Typ. 8.5 nC).
  • Low Crss (Typ. 4.3 pF).
  • 100% Avalanche Tested.
  • These Devices are Halid Free and are RoHS Compliant.

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Datasheet Details

Part number FQD2N60C
Manufacturer onsemi
File Size 449.88 KB
Description N-Channel MOSFET
Datasheet download datasheet FQD2N60C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, QFET) 600 V, 1.9 A, 4,7 W FQD2N60C / FQU2N60C This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 1.9 A, 600 V, RDS(on) = 4.7 W (Max.) @ VGS = 10 V, ID = 0.95 A • Low Gate Charge (Typ. 8.5 nC) • Low Crss (Typ. 4.