FQD3N50C Datasheet | Fairchild Semiconductor

FQD3N50C/FQU3N50C 500V N-Channel MOSFET QFET FQD3N50C/FQU3N50C 500V N-Channel MOSFET Features - 2.5 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V - Low gate charge ( typical 10 n C ) - Low Crss ( typical 8.5 p F) - Fast switching - 100 % avalanche tested - Improved dv/dt capability ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. { - ◀ D-PAK FQD Series I-PAK FQU Series G{ ▲ - -...