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FQD3N60 Datasheet 600v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQD3N60 / FQU3N60 April 2000 QFET FQD3N60 / FQU3N60 600V N-Channel.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supply.

Key Features

  • 2.4A, 600V, RDS(on) = 3.6Ω @VGS = 10 V Low gate charge ( typical 10 nC) Low Crss ( typical 5.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C).

More Datasheets from Fairchild (now onsemi)

Part Number Description
FQD3N60C 600V N-Channel MOSFET
FQD3N25 250V N-Channel MOSFET
FQD3N30 300V N-Channel MOSFET
FQD3N40 400V N-Channel MOSFET
FQD3N50C 500V N-Channel MOSFET
FQD30N06 60V N-Channel MOSFET
FQD30N06L 60V LOGIC N-Channel MOSFET
FQD3P20 200V P-Channel MOSFET
FQD3P50 500V P-Channel MOSFET
FQD3P50TM_F085 500V P-Channel MOSFET

FQD3N60 Distributor