FQD5N50C Datasheet | Fairchild Semiconductor

FQD5N50C / FQU5N50C FQD5N50C / FQU5N50C 500V N-Channel MOSFET October 2008 QFET® General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features - 4.0A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V - Low gate charge ( typical 18n C) - Low Crss ( typical 15p F) - Fast switching - 100% avalanche tested - Improved dv/dt capability - Ro HS pliant ! D-PAK G S FQD Series I-PAK FQU...