Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Features
- 4.0A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V.
- Low gate charge ( typical 18nC).
- Low Crss ( typical 15pF).
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability.
- RoHS Compliant
D
D
!
D-PAK
G S FQD Series
GDS
I-PAK
FQU Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuo.
FQD5N50C Datasheet
