FQD5P10 Datasheet 100V P-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQD5P10 P-Channel QFET® MOSFET FQD5P10 P-Channel QFET® MOSFET -100 V, -3.6 A, 1.

FQD5P10 100v p-channel mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	FQD5P10
Manufacturer	Fairchild (now onsemi)
File Size	451.89 KB
Description	100V P-Channel MOSFET
Download	FQD5P10 Download (PDF)

General Description

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Key Features

-3.6 A, -100 V, RDS(on) = 1.05 (Max. )@ VGS = -10 V, ID = 1.8 A.
Low Gate Charge (Typ. 6.3 nC).
Low Crss (Typ. 18 pF).
100% avalanche tested D G G S D-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy.

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