FQD6N50C Datasheet | Fairchild Semiconductor

FQD6N50C / FQU6N50C QFET FQD6N50C / FQU6N50C 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. ® Features - - - - - - 4.5A, 500V, RDS(on) = 1.2 Ω @VGS = 10 V Low gate charge (typical 19nC) Low Crss...