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FQD6N60C - 600V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 4 A, 600 V, RDS(on) = 2.0 Ω @ VGS = 10 V.
  • Low gate charge ( typical 16 nC ).
  • Low Crss ( typical 7 pF).
  • Fast switching.
  • 100 % avalanche tested www. DataSheet4U. com.
  • Improved dv/dt capability ®.

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Datasheet preview – FQD6N60C

Datasheet Details

Part number FQD6N60C
Manufacturer Fairchild Semiconductor
File Size 703.63 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet FQD6N60C Datasheet
Additional preview pages of the FQD6N60C datasheet.

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Full PDF Text Transcription

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FQD6N60C 600V N-Channel MOSFET QFET FQD6N60C 600V N-Channel MOSFET Features • 4 A, 600 V, RDS(on) = 2.0 Ω @ VGS = 10 V • Low gate charge ( typical 16 nC ) • Low Crss ( typical 7 pF) • Fast switching • 100 % avalanche tested www.DataSheet4U.com • Improved dv/dt capability ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
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