FQD6N60C Datasheet | Fairchild Semiconductor

FQD6N60C 600V N-Channel MOSFET QFET 600V N-Channel MOSFET Features - 4 A, 600 V, RDS(on) = 2.0 Ω @ VGS = 10 V - Low gate charge ( typical 16 nC ) - Low Crss ( typical 7 pF) - Fast switching - 100 % avalanche tested .. - Improved dv/dt capability ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power...